N-channel transistor IHW20T120, 20A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1460pF. CE diode: yes. Channel type: N. Collector current: 40A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 78pF. Function: Soft Switching Applications. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60A. Marking on the case: H20T120. Maximum saturation voltage VCE(sat): 2.2V. Number of terminals: 3. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 178W. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Td(off): 560 ns. Td(on): 50 ns. Technology: 'Trench and Fieldstop' technology IGBT transistor. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27