N-channel transistor IHW20N120R5, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1340pF. CE diode: yes. Channel type: N. Collector current: 40A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 43pF. Function: Powerful monolithic body diode with low forward voltage. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60A. Marking on the case: H20MR5. Maximum saturation voltage VCE(sat): 1.75V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 288W. RoHS: yes. Saturation voltage VCE(sat): 1.55V. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Trr Diode (Min.): 90 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27