N-channel transistor IHW15N120R3, 15A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 15A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1165pF. CE diode: yes. Channel type: N. Collector current: 30A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 40pF. Function: Inductive Cooking. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 45A. Marking on the case: H15R1203. Maximum saturation voltage VCE(sat): 1.75V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 254W. RoHS: yes. Saturation voltage VCE(sat): 1.48V. Spec info: Reverse conducting IGBT with monolithic body diode. Td(off): 300 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27