N-channel transistor IGW75N60H3, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 4620pF. CE diode: no. Channel type: N. Collector current: 140A. Conditioning unit: 25. Conditioning: plastic tube. Cost): 240pF. Delivery time: KB. Function: Very low VCEsat. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 225A. Marking on the case: G75H603. Maximum saturation voltage VCE(sat): 2.25V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 428W. RoHS: yes. Saturation voltage VCE(sat): 1.85V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Td(off): 265 ns. Td(on): 31 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27