N-channel transistor HUF75645P3, 65A, 75A, 250uA, 0.0115 Ohms, TO-220, TO-220AB, 100V

N-channel transistor HUF75645P3, 65A, 75A, 250uA, 0.0115 Ohms, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
3.35$
5-24
2.92$
25-49
2.63$
50+
2.38$
Quantity in stock: 48

N-channel transistor HUF75645P3, 65A, 75A, 250uA, 0.0115 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 3790pF. Channel type: N. Cost): 810pF. Drain-source protection: zener diode. Function: UltraFET Power MOSFET. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 430A. Marking on the case: 75645 P. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 310W. Quantity per case: 1. RoHS: yes. Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:29

HUF75645P3
31 parameters
ID (T=100°C)
65A
ID (T=25°C)
75A
Idss (max)
250uA
On-resistance Rds On
0.0115 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
3790pF
Channel type
N
Cost)
810pF
Drain-source protection
zener diode
Function
UltraFET Power MOSFET
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
430A
Marking on the case
75645 P
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
310W
Quantity per case
1
RoHS
yes
Td(off)
41 ns
Td(on)
14 ns
Technology
UltraFET Power MOSFET
Trr Diode (Min.)
145 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild