N-channel transistor HUF75307D3S, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V

N-channel transistor HUF75307D3S, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V

Quantity
Unit price
1-4
0.92$
5-49
0.73$
50-99
0.62$
100+
0.55$
Quantity in stock: 108

N-channel transistor HUF75307D3S, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V. ID (T=25°C): 13A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 250pF. Channel type: N. Cost): 100pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Marking on the case: 75307D. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Harris. Quantity in stock updated on 10/31/2025, 09:29

Technical documentation (PDF)
HUF75307D3S
28 parameters
ID (T=25°C)
13A
Idss (max)
250uA
On-resistance Rds On
0.09 Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-252AA )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
250pF
Channel type
N
Cost)
100pF
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Marking on the case
75307D
Number of terminals
2
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
35W
Quantity per case
1
RoHS
yes
Td(off)
35 ns
Td(on)
7 ns
Technology
UltraFET Power MOSFET
Trr Diode (Min.)
45 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Harris