N-channel transistor HUF75307D3, 13A, 250uA, 0.09 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V

N-channel transistor HUF75307D3, 13A, 250uA, 0.09 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V

Quantity
Unit price
1-4
0.84$
5-49
0.67$
50-99
0.57$
100+
0.50$
Quantity in stock: 50

N-channel transistor HUF75307D3, 13A, 250uA, 0.09 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 13A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 250pF. Channel type: N. Cost): 100pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Marking on the case: 75307D. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Harris. Quantity in stock updated on 10/31/2025, 09:29

Technical documentation (PDF)
HUF75307D3
28 parameters
ID (T=25°C)
13A
Idss (max)
250uA
On-resistance Rds On
0.09 Ohms
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251AA ( I-PAK )
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
250pF
Channel type
N
Cost)
100pF
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Marking on the case
75307D
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
35W
Quantity per case
1
RoHS
yes
Td(off)
35 ns
Td(on)
7 ns
Technology
UltraFET Power MOSFET
Trr Diode (Min.)
45 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Harris