N-channel transistor HGTG5N120BND, 10A, TO-247, TO-247, 1200V. Ic(T=100°C): 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current: 25A. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 40A. Marking on the case: 5N120BND. Maximum saturation voltage VCE(sat): 3.7V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 167W. RoHS: yes. Saturation voltage VCE(sat): 2.45V. Td(off): 182 ns. Td(on): 20 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:29