N-channel transistor HGTG30N60A4D, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Housing (JEDEC standard): -. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current Ic [A]: 75A. Collector current: 75A. Collector peak current Ip [A]: 240A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Gate breakdown voltage Ugs [V]: 7V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 240A. Manufacturer's marking: G30N60A4. Marking on the case: 30N60A4D. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 463W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 463W. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Switch-off delay tf[nsec.]: 150 ns. Switch-on time ton [nsec.]: 25 ns. Td(off): 150 ns. Td(on): 25 ns. Trr Diode (Min.): 30 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:29