N-channel transistor HGTG20N60B3D, 20A, TO-247, TO-247AC, 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current: 40A. Conditioning unit: 30. Conditioning: plastic tube. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 160A. Marking on the case: G20N60B3D. Maximum saturation voltage VCE(sat): 2.5V. Number of terminals: 3. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 165W. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Spec info: Typical Fall Time 140ns at 150°C. Td(off): 220 ns. Td(on): 25 ns. Trr Diode (Min.): 45 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:29