N-channel transistor HGTG12N60A4D, TO-247, 23A, TO-247 ( AC ), 600V

N-channel transistor HGTG12N60A4D, TO-247, 23A, TO-247 ( AC ), 600V

Quantity
Unit price
1-4
6.28$
5-14
5.71$
15-29
5.09$
30+
4.48$
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N-channel transistor HGTG12N60A4D, TO-247, 23A, TO-247 ( AC ), 600V. Housing: TO-247. Housing (JEDEC standard): -. Ic(T=100°C): 23A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. CE diode: no. Channel type: N. Collector current Ic [A]: 54A. Collector current: 54A. Collector peak current Ip [A]: 96A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Function: SMPS, IGBT with Anti-Parallel Hyperfast Diode. Gate breakdown voltage Ugs [V]: 5.6V. Gate/emitter voltage VGE(th) min.: 5.6V. Gate/emitter voltage VGE(th)max.: 5.6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 96A. Manufacturer's marking: 12N60A4D. Marking on the case: 12N60A4D. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 167W. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 167W. Production date: 2014/17. RoHS: yes. Saturation voltage VCE(sat): 2V. Spec info: >100kHz, 390V, 12A. Switch-off delay tf[nsec.]: 110 ns. Switch-on time ton [nsec.]: 17 ns. Td(off): 96 ns. Td(on): 17 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:29

Technical documentation (PDF)
HGTG12N60A4D
40 parameters
Housing
TO-247
Ic(T=100°C)
23A
Housing (according to data sheet)
TO-247 ( AC )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
CE diode
no
Channel type
N
Collector current Ic [A]
54A
Collector current
54A
Collector peak current Ip [A]
96A
Collector-emitter voltage Uce [V]
600V
Component family
IGBT transistor
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Function
SMPS, IGBT with Anti-Parallel Hyperfast Diode
Gate breakdown voltage Ugs [V]
5.6V
Gate/emitter voltage VGE(th) min.
5.6V
Gate/emitter voltage VGE(th)max.
5.6V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
96A
Manufacturer's marking
12N60A4D
Marking on the case
12N60A4D
Max temperature
+150°C.
Maximum dissipation Ptot [W]
167W
Maximum saturation voltage VCE(sat)
2.7V
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
167W
Production date
2014/17
RoHS
yes
Saturation voltage VCE(sat)
2V
Spec info
>100kHz, 390V, 12A
Switch-off delay tf[nsec.]
110 ns
Switch-on time ton [nsec.]
17 ns
Td(off)
96 ns
Td(on)
17 ns
Original product from manufacturer
Fairchild