N-channel transistor GT35J321, 18A, TO-3P( N )IS, TO-3P, 600V. Ic(T=100°C): 18A. Housing: TO-3P( N )IS. Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current: 37A. Function: High Power Switching Applications. Gate/emitter voltage VGE: 25V. Germanium diode: no. Ic(pulse): 100A. Maximum saturation voltage VCE(sat): 2.3V. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Saturation voltage VCE(sat): 1.9V. Spec info: insulated gate bipolar transistor (IGBT). Td(off): 0.51 ns. Td(on): 0.33 ns. Temperature: +150°C. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:26