N-channel transistor GT30J324, TO-3PN ( 2-16C1B ), TO-3P, 600V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 4650pF. CE diode: yes. Channel type: N. Collector current: 30A. Function: High Power Switching Applications. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60A. Maximum saturation voltage VCE(sat): 2.45V. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Saturation voltage VCE(sat): 2V. Spec info: insulated gate bipolar transistor (IGBT). Td(off): 0.3 ns. Td(on): 0.09 ns. Temperature: +150°C. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:26