| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
N-channel transistor GT30J322, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V
Quantity
Unit price
1-4
7.88$
5-9
7.16$
10-24
6.62$
25+
6.16$
| Equivalence available | |
| Quantity in stock: 39 |
N-channel transistor GT30J322, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P( GCE ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current: 30A. Function: 'Current Resonance Inverter Switching'. Germanium diode: no. Ic(pulse): 100A. Maximum saturation voltage VCE(sat): 2.1V. Number of terminals: 3. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Saturation voltage VCE(sat): 2.1V. Spec info: insulated gate bipolar transistor (IGBT). Td(off): 400 ns. Td(on): 30 ns. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:26
GT30J322
20 parameters
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P( GCE )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
CE diode
yes
Channel type
N
Collector current
30A
Function
'Current Resonance Inverter Switching'
Germanium diode
no
Ic(pulse)
100A
Maximum saturation voltage VCE(sat)
2.1V
Number of terminals
3
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
75W
RoHS
yes
Saturation voltage VCE(sat)
2.1V
Spec info
insulated gate bipolar transistor (IGBT)
Td(off)
400 ns
Td(on)
30 ns
Original product from manufacturer
Toshiba