N-channel transistor G60N04K, 60A, 1uA, 5.3m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V

N-channel transistor G60N04K, 60A, 1uA, 5.3m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V

Quantity
Unit price
1-4
1.86$
5-24
1.57$
25-49
1.37$
50-99
1.25$
100+
1.06$
Quantity in stock: 67

N-channel transistor G60N04K, 60A, 1uA, 5.3m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=25°C): 60A. Idss (max): 1uA. On-resistance Rds On: 5.3m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 1800pF. Channel type: N. Conditioning unit: 2500. Conditioning: roll. Cost): 280pF. Drain-source protection: yes. Function: power switching, DC/DC converters. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): n/a. Id(imp): 200A. Marking on the case: G60N04K. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 65W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 6.5 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.1V. Original product from manufacturer: Goford Semiconductor. Quantity in stock updated on 10/31/2025, 09:26

G60N04K
31 parameters
ID (T=25°C)
60A
Idss (max)
1uA
On-resistance Rds On
5.3m Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
40V
Assembly/installation
surface-mounted component (SMD)
C(in)
1800pF
Channel type
N
Conditioning unit
2500
Conditioning
roll
Cost)
280pF
Drain-source protection
yes
Function
power switching, DC/DC converters
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
200A
Marking on the case
G60N04K
Number of terminals
2
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
65W
Quantity per case
1
RoHS
yes
Td(off)
30 ns
Td(on)
6.5 ns
Technology
ENHANCEMENT MODE POWER MOSFET
Trr Diode (Min.)
29 ns
Type of transistor
MOSFET
Vgs(th) max.
2.5V
Vgs(th) min.
1.1V
Original product from manufacturer
Goford Semiconductor