N-channel transistor FZ1200R12HP4, 1200A, other, other, 1200V

N-channel transistor FZ1200R12HP4, 1200A, other, other, 1200V

Quantity
Unit price
1-1
636.21$
2-4
563.31$
5-7
519.57$
8-14
482.74$
15+
426.90$
Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 8

N-channel transistor FZ1200R12HP4, 1200A, other, other, 1200V. Ic(T=100°C): 1200A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 74pF. CE diode: yes. Channel type: N. Collector current: 1790A. Forward voltage Vf (min): 1.8V. Function: ICRM--Tp=1mS 2400A. Gate/emitter voltage VGE(th) min.: 5.8V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 2400A. Number of terminals: 7. Operating temperature: -40...+125°C. Pd (Power Dissipation, Max): 7150W. RoHS: no. Saturation voltage VCE(sat): 1.7V. Spec info: VCE(sat) 1.7V (Ic=1200A, VGE=15V, 25°C). Td(off): 0.92 ns. Td(on): 0.41 ns. Threshold voltage Vf (max): 2.35V. Original product from manufacturer: Eupec/infineon. Quantity in stock updated on 10/31/2025, 09:26

Technical documentation (PDF)
FZ1200R12HP4
25 parameters
Ic(T=100°C)
1200A
Housing
other
Housing (according to data sheet)
other
Collector/emitter voltage Vceo
1200V
Assembly/installation
PCB through-hole mounting
C(in)
74pF
CE diode
yes
Channel type
N
Collector current
1790A
Forward voltage Vf (min)
1.8V
Function
ICRM--Tp=1mS 2400A
Gate/emitter voltage VGE(th) min.
5.8V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
2400A
Number of terminals
7
Operating temperature
-40...+125°C
Pd (Power Dissipation, Max)
7150W
RoHS
no
Saturation voltage VCE(sat)
1.7V
Spec info
VCE(sat) 1.7V (Ic=1200A, VGE=15V, 25°C)
Td(off)
0.92 ns
Td(on)
0.41 ns
Threshold voltage Vf (max)
2.35V
Original product from manufacturer
Eupec/infineon