N-channel transistor FS7KM-18A, 7A, 1mA, 1.54 Ohms, TO-220FP, TO-220FN, 900V. ID (T=25°C): 7A. Idss (max): 1mA. On-resistance Rds On: 1.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 1380pF. Channel type: N. Cost): 140pF. Drain-source protection: diode. Function: HIGH-SPEED SW.. G-S Protection: yes. Gate/emitter voltage VGE(th)max.: 30 v. IDss (min): 10uA. Id(imp): 21A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. Td(off): 180 ns. Td(on): 25 ns. Technology: Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Mitsubishi Electric Semiconductor. Quantity in stock updated on 10/31/2025, 09:26