N-channel transistor FS75R12KE3GBOSA1, 75A, other, other, 1200V. Ic(T=100°C): 75A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 5300pF. CE diode: yes. Channel type: N. Collector current: 100A. Dimensions: 122x62x17.5mm. Function: ICRM 150A Tp=1ms. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 150A. Marking on the case: FS75R12KE3G. Maximum saturation voltage VCE(sat): 2.15V. Note: 6x IGBT+ CE Diode. Number of terminals: 35. Operating temperature: -40...+125°C. Pd (Power Dissipation, Max): 355W. RoHS: yes. Saturation voltage VCE(sat): 1.65V. Td(off): 42us. Td(on): 26us. Original product from manufacturer: Eupec/infineon. Quantity in stock updated on 10/31/2025, 09:26