| Quantity in stock: 16 |
N-channel transistor FS10KM-12, 5A, 10A, 1mA, 0.72 Ohms, TO-220FP, TO-220FN, 600V
Quantity
Unit price
1-4
2.20$
5-9
1.96$
10-24
1.73$
25-49
1.60$
50+
1.37$
| Equivalence available | |
| Quantity in stock: 66 |
N-channel transistor FS10KM-12, 5A, 10A, 1mA, 0.72 Ohms, TO-220FP, TO-220FN, 600V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 1mA. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. Channel type: N. Cost): 170pF. Drain-source protection: yes. Function: High Speed Switching. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): na. Id(imp): 30A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. Td(off): 130 ns. Td(on): 25 ns. Technology: Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Mitsubishi Electric Semiconductor. Quantity in stock updated on 10/31/2025, 09:26
FS10KM-12
27 parameters
ID (T=100°C)
5A
ID (T=25°C)
10A
Idss (max)
1mA
On-resistance Rds On
0.72 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FN
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1500pF
Channel type
N
Cost)
170pF
Drain-source protection
yes
Function
High Speed Switching
G-S Protection
yes
Gate/source voltage Vgs
30 v
IDss (min)
na
Id(imp)
30A
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
40W
Quantity per case
1
Td(off)
130 ns
Td(on)
25 ns
Technology
Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Mitsubishi Electric Semiconductor