N-channel transistor FQU20N06L, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V

N-channel transistor FQU20N06L, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V

Quantity
Unit price
1-4
0.86$
5-49
0.69$
50-99
0.57$
100+
0.52$
Quantity in stock: 29

N-channel transistor FQU20N06L, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=100°C): 10.9A. ID (T=25°C): 17.2A. Idss (max): 10uA. On-resistance Rds On: 0.046 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 480pF. Channel type: N. Cost): 175pF. Drain-source protection: diode. Function: Logic Level. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 68.8A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 38W. Quantity per case: 1. RoHS: yes. Spec info: low Gate Charge (typ 9.5nC). Td(off): 35 ns. Td(on): 10 ns. Technology: QFET, Enhancement mode power MOSFET. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:59

Technical documentation (PDF)
FQU20N06L
30 parameters
ID (T=100°C)
10.9A
ID (T=25°C)
17.2A
Idss (max)
10uA
On-resistance Rds On
0.046 Ohms
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251AA ( I-PAK )
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
480pF
Channel type
N
Cost)
175pF
Drain-source protection
diode
Function
Logic Level
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
68.8A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
38W
Quantity per case
1
RoHS
yes
Spec info
low Gate Charge (typ 9.5nC)
Td(off)
35 ns
Td(on)
10 ns
Technology
QFET, Enhancement mode power MOSFET
Trr Diode (Min.)
54 ns
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
Fairchild