N-channel transistor FQT4N20LTF, 0.55A, 0.85A, 10uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V

N-channel transistor FQT4N20LTF, 0.55A, 0.85A, 10uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V

Quantity
Unit price
1-4
0.62$
5-24
0.54$
25-49
0.47$
50-99
0.43$
100+
0.36$
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N-channel transistor FQT4N20LTF, 0.55A, 0.85A, 10uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 0.55A. ID (T=25°C): 0.85A. Idss (max): 10uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. Assembly/installation: surface-mounted component (SMD). C(in): 240pF. Channel type: N. Cost): 36pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 3.4A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.2W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 7 ns. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:59

FQT4N20LTF
28 parameters
ID (T=100°C)
0.55A
ID (T=25°C)
0.85A
Idss (max)
10uA
On-resistance Rds On
1.1 Ohms
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Voltage Vds(max)
200V
Assembly/installation
surface-mounted component (SMD)
C(in)
240pF
Channel type
N
Cost)
36pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
3.4A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
2.2W
Quantity per case
1
RoHS
yes
Td(off)
15 ns
Td(on)
7 ns
Trr Diode (Min.)
90 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
Fairchild