N-channel transistor FQT1N60CTF, 250uA, 9.3 Ohms, SOT-223 ( TO-226 ), SOT-223, 600V. Idss (max): 250uA. On-resistance Rds On: 9.3 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 600V. Assembly/installation: surface-mounted component (SMD). C(in): 130pF. Channel type: N. Cost): 19pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Marking on the case: FQT1N60C. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.1W. Quantity per case: 1. RoHS: yes. Td(off): 13 ns. Td(on): 7 ns. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 06:59