N-channel transistor FQPF85N06, 37.5A, 53A, 10uA, 0.008 Ohms, TO-220FP, TO-220F, 60V

N-channel transistor FQPF85N06, 37.5A, 53A, 10uA, 0.008 Ohms, TO-220FP, TO-220F, 60V

Quantity
Unit price
1-4
2.99$
5-24
2.60$
25-49
2.21$
50+
2.01$
Quantity in stock: 3

N-channel transistor FQPF85N06, 37.5A, 53A, 10uA, 0.008 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 37.5A. ID (T=25°C): 53A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 3170pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 1150pF. Drain-source protection: diode. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 212A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 62W. Quantity per case: 1. RoHS: yes. Td(off): 170 ns. Td(on): 40 ns. Technology: DMOS, QFET MOSFET. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQPF85N06
31 parameters
ID (T=100°C)
37.5A
ID (T=25°C)
53A
Idss (max)
10uA
On-resistance Rds On
0.008 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
3170pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
1150pF
Drain-source protection
diode
Function
Fast switch, Low gate charge 17nC, Low Crss 5.6pF
G-S Protection
no
Gate/source voltage Vgs
25V
IDss (min)
1uA
Id(imp)
212A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
62W
Quantity per case
1
RoHS
yes
Td(off)
170 ns
Td(on)
40 ns
Technology
DMOS, QFET MOSFET
Trr Diode (Min.)
70 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Fairchild