N-channel transistor FQPF3N80C, 1.9A, 3A, 100uA, 4 Ohms, TO-220FP, TO-220F, 800V

N-channel transistor FQPF3N80C, 1.9A, 3A, 100uA, 4 Ohms, TO-220FP, TO-220F, 800V

Quantity
Unit price
1-4
1.87$
5-24
1.62$
25-49
1.44$
50-99
1.28$
100+
1.09$
Quantity in stock: 64

N-channel transistor FQPF3N80C, 1.9A, 3A, 100uA, 4 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 543pF. Channel type: N. Cost): 54pF. Drain-source protection: yes. Function: Fast switch, Low gate charge 13nC, Low Crss 5.5pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 12A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 39W. Quantity per case: 1. RoHS: yes. Td(off): 22.5 ns. Td(on): 15 ns. Technology: DMOS, QFET. Trr Diode (Min.): 642 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQPF3N80C
30 parameters
ID (T=100°C)
1.9A
ID (T=25°C)
3A
Idss (max)
100uA
On-resistance Rds On
4 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
543pF
Channel type
N
Cost)
54pF
Drain-source protection
yes
Function
Fast switch, Low gate charge 13nC, Low Crss 5.5pF
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
12A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
39W
Quantity per case
1
RoHS
yes
Td(off)
22.5 ns
Td(on)
15 ns
Technology
DMOS, QFET
Trr Diode (Min.)
642 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Fairchild