N-channel transistor FQP50N06, TO-220, 60V, 35.4A, 50A, 10uA, 0.018 Ohms, TO-220, 60V

N-channel transistor FQP50N06, TO-220, 60V, 35.4A, 50A, 10uA, 0.018 Ohms, TO-220, 60V

Quantity
Unit price
1-4
1.42$
5-24
1.22$
25-49
1.06$
50-99
0.97$
100+
0.86$
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Quantity in stock: 124

N-channel transistor FQP50N06, TO-220, 60V, 35.4A, 50A, 10uA, 0.018 Ohms, TO-220, 60V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. ID (T=100°C): 35.4A. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.018 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 1180pF. Channel type: N. Ciss Gate Capacitance [pF]: 1540pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 440pF. Drain current Id (A) @ 25°C: 50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 25A. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 200A. Manufacturer's marking: FQP50N06. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 120W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 130 ns. Switch-on time ton [nsec.]: 40 ns. Td(off): 60 ns. Td(on): 15 ns. Technology: DMOS, QFET. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FQP50N06
43 parameters
Housing
TO-220
Drain-source voltage Uds [V]
60V
ID (T=100°C)
35.4A
ID (T=25°C)
50A
Idss (max)
10uA
On-resistance Rds On
0.018 Ohms
Housing (according to data sheet)
TO-220
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
1180pF
Channel type
N
Ciss Gate Capacitance [pF]
1540pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Cost)
440pF
Drain current Id (A) @ 25°C
50A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.022 Ohms @ 25A
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate breakdown voltage Ugs [V]
4 v
Gate/source voltage Vgs
25V
IDss (min)
1uA
Id(imp)
200A
Manufacturer's marking
FQP50N06
Max temperature
+175°C.
Maximum dissipation Ptot [W]
120W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
120W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
130 ns
Switch-on time ton [nsec.]
40 ns
Td(off)
60 ns
Td(on)
15 ns
Technology
DMOS, QFET
Trr Diode (Min.)
52 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild

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