N-channel transistor FQP33N10, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1150pF. Channel type: N. Cost): 320pF. Drain-source protection: yes. Function: Fast switching, Low Gate Charge. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 132A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 127W. Quantity per case: 1. RoHS: yes. Td(off): 80 ns. Td(on): 15 ns. Technology: DMOS, QFET. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:19