N-channel transistor FQP19N10, 13.5A, 19A, 10uA, 0.078 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 13.5A. ID (T=25°C): 19A. Idss (max): 10uA. On-resistance Rds On: 0.078 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 600pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 165pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 76A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Td(off): 20 ns. Td(on): 7.5 ns. Technology: DMOS, QFET. Trr Diode (Min.): 78 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19