N-channel transistor FQP13N50C, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V

N-channel transistor FQP13N50C, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V

Quantity
Unit price
1-4
6.07$
5-14
5.71$
15-29
5.37$
30-59
5.04$
60+
4.46$
Quantity in stock: 14

N-channel transistor FQP13N50C, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1580pF. Channel type: N. Cost): 180pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 52A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 195W. Quantity per case: 1. RoHS: yes. Spec info: Low gate charge (typical 43nC). Td(off): 130 ns. Td(on): 25 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FQP13N50C
31 parameters
ID (T=100°C)
8A
ID (T=25°C)
13A
Idss (max)
10uA
On-resistance Rds On
0.39 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
1580pF
Channel type
N
Cost)
180pF
Drain-source protection
diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
52A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
195W
Quantity per case
1
RoHS
yes
Spec info
Low gate charge (typical 43nC)
Td(off)
130 ns
Td(on)
25 ns
Technology
N-channel MOSFET transistor (DMOS, QFET)
Trr Diode (Min.)
410 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild