N-channel transistor FQP12N60C, TO-220, 600V, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220, 600V

N-channel transistor FQP12N60C, TO-220, 600V, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220, 600V

Quantity
Unit price
1-4
4.45$
5-24
4.23$
25-49
4.07$
50-99
3.87$
100+
3.59$
Quantity in stock: 23

N-channel transistor FQP12N60C, TO-220, 600V, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220, 600V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1760pF. Channel type: N. Ciss Gate Capacitance [pF]: 2290pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 182pF. Drain current Id (A) @ 25°C: 12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.65 Ohms @ 6A. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 48A. Manufacturer's marking: FQP12N60C. Marking on the case: FQP12N60C. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 225W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 225W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 280 ns. Switch-on time ton [nsec.]: 70 ns. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FQP12N60C
44 parameters
Housing
TO-220
Drain-source voltage Uds [V]
600V
ID (T=100°C)
7.4A
ID (T=25°C)
12A
Idss (max)
10uA
On-resistance Rds On
0.53 Ohms
Housing (according to data sheet)
TO-220
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1760pF
Channel type
N
Ciss Gate Capacitance [pF]
2290pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Cost)
182pF
Drain current Id (A) @ 25°C
12A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.65 Ohms @ 6A
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate breakdown voltage Ugs [V]
4 v
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
48A
Manufacturer's marking
FQP12N60C
Marking on the case
FQP12N60C
Max temperature
+150°C.
Maximum dissipation Ptot [W]
225W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
225W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
280 ns
Switch-on time ton [nsec.]
70 ns
Td(off)
140 ns
Td(on)
30 ns
Technology
DMOS, QFET
Trr Diode (Min.)
420 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild