N-channel transistor FQD7N10L, 3.67A, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 3.67A. ID (T=25°C): 23.2A. Idss (max): 10uA. On-resistance Rds On: 0.258 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 220pF. Channel type: N. Cost): 55pF. Drain-source protection: yes. Function: Low Gate Charge. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 5.8A. Marking on the case: FQD7N10L. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. RoHS: yes. Td(off): 17 ns. Td(on): 9 ns. Technology: DMOS, QFET. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:19