N-channel transistor FQD19N10L, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. On-resistance Rds On: 0.074 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 670pF. Channel type: N. Cost): 160pF. Drain-source protection: yes. Equivalents: FQD19N10LTM. Function: logic level gated MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 62.4A. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19