N-channel transistor FQA28N15, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V

N-channel transistor FQA28N15, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V

Quantity
Unit price
1-4
4.04$
5-9
3.66$
10-29
3.41$
30-59
3.16$
60+
2.81$
Quantity in stock: 308

N-channel transistor FQA28N15, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C): 23.3A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.067 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 1250pF. Channel type: N. Cost): 260pF. Drain-source protection: yes. Function: Fast switching, Low gate charge (typical 40nC). G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 132A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 227W. Quantity per case: 1. RoHS: yes. Td(off): 100 ns. Td(on): 17 ns. Technology: DMOS Technology. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FQA28N15
30 parameters
ID (T=100°C)
23.3A
ID (T=25°C)
33A
Idss (max)
10uA
On-resistance Rds On
0.067 Ohms
Housing
TO-3PN ( 2-16C1B )
Housing (according to data sheet)
TO-3PN
Voltage Vds(max)
150V
Assembly/installation
PCB through-hole mounting
C(in)
1250pF
Channel type
N
Cost)
260pF
Drain-source protection
yes
Function
Fast switching, Low gate charge (typical 40nC)
G-S Protection
no
Gate/source voltage Vgs
25V
IDss (min)
1uA
Id(imp)
132A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
227W
Quantity per case
1
RoHS
yes
Td(off)
100 ns
Td(on)
17 ns
Technology
DMOS Technology
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild