N-channel transistor FQA13N80-F109, TO-3PN ( 2-16C1B ), 800V, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN, 800V. Housing: TO-3PN ( 2-16C1B ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 800V. ID (T=100°C): 8A. ID (T=25°C): 12.6A. Idss (max): 100uA. On-resistance Rds On: 0.58 Ohms. Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2700pF. Channel type: N. Ciss Gate Capacitance [pF]: 3500pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 275pF. Drain current Id (A) @ 25°C: 12.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Drain-source protection: diode. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Gate breakdown voltage Ugs [V]: 5V. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 50.4A. Manufacturer's marking: FQA13N80. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 300W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 320 ns. Switch-on time ton [nsec.]: 130 ns. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19