N-channel transistor FQA13N50CF, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V

N-channel transistor FQA13N50CF, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V

Quantity
Unit price
1-4
4.84$
5-9
4.38$
10-24
4.03$
25-49
3.77$
50+
3.36$
Quantity in stock: 22

N-channel transistor FQA13N50CF, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.43 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1580pF. Channel type: N. Cost): 180pF. Drain-source protection: diode. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 60A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 218W. Quantity per case: 1. RoHS: yes. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FQA13N50CF
30 parameters
ID (T=100°C)
9.5A
ID (T=25°C)
15A
Idss (max)
10uA
On-resistance Rds On
0.43 Ohms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
1580pF
Channel type
N
Cost)
180pF
Drain-source protection
diode
Function
Fast switching, Low gate charge (typical 43nC)
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
60A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
218W
Quantity per case
1
RoHS
yes
Td(off)
130 ns
Td(on)
25 ns
Technology
DMOS Technology
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild