N-channel transistor FQA11N90C_F109, TO-3PN, 900V. Housing: TO-3PN. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 900V. Ciss Gate Capacitance [pF]: 3290pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Manufacturer's marking: FQA11N90C_F109. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 300W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 270 ns. Switch-on time ton [nsec.]: 130 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 23:16