N-channel transistor FQA10N80C, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2150pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 180pF. Drain-source protection: diode. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 40A. Marking on the case: FQA10N80C. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 240W. Quantity per case: 1. RoHS: yes. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19