N-channel transistor FP25R12W2T4, 25A, other, other, 1200V. Ic(T=100°C): 25A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1.45pF. CE diode: yes. Channel type: N. Collector current: 39A. Dimensions: 56.7x48x12mm. Function: ICRM--50A Tp=1mS, Tc=25°C. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 50A. Maximum saturation voltage VCE(sat): 2.25V. Note: 7x IGBT+ CE Diode. Number of terminals: 33dB. Operating temperature: -40...+125°C. Pd (Power Dissipation, Max): 175W. RoHS: yes. Saturation voltage VCE(sat): 1.85V. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Original product from manufacturer: Eupec/infineon. Quantity in stock updated on 10/31/2025, 08:40