N-channel transistor FGH40N60SFDTU, TO-247, 40A, TO-247AB, 600V

N-channel transistor FGH40N60SFDTU, TO-247, 40A, TO-247AB, 600V

Quantity
Unit price
1-4
7.62$
5-14
6.86$
15-29
6.31$
30-59
5.95$
60+
5.40$
+2 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 32

N-channel transistor FGH40N60SFDTU, TO-247, 40A, TO-247AB, 600V. Housing: TO-247. Ic(T=100°C): 40A. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 2110pF. CE diode: yes. Channel type: N. Charge: 120nC. Collector current Ic [A]: 40A. Collector current: 80A. Collector peak current Ip [A]: 120A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 200pF. Emitter - Gate Voltage: ±20V. Function: Induction Heating, UPS, SMPS, PFC. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60.4k Ohms. Marking on the case: FGH40N60SFD. Maximum saturation voltage VCE(sat): 2.9V. Number of terminals: 3. Operating temperature: -55...+150°C. Packaging: tubus. Pd (Power Dissipation, Max): 290W. Power: 116W. RoHS: yes. Saturation voltage VCE(sat): 2.3V. Td(off): 115 ns. Td(on): 25 ns. Trr Diode (Min.): 45 ns. Type of transistor: IGBT. Voltage (collector - emitter): 600V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FGH40N60SFDTU
37 parameters
Housing
TO-247
Ic(T=100°C)
40A
Housing (according to data sheet)
TO-247AB
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
2110pF
CE diode
yes
Channel type
N
Charge
120nC
Collector current Ic [A]
40A
Collector current
80A
Collector peak current Ip [A]
120A
Conditioning unit
30
Conditioning
plastic tube
Cost)
200pF
Emitter - Gate Voltage
±20V
Function
Induction Heating, UPS, SMPS, PFC
Gate/emitter voltage VGE(th) min.
4 v
Gate/emitter voltage VGE(th)max.
6.5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
60.4k Ohms
Marking on the case
FGH40N60SFD
Maximum saturation voltage VCE(sat)
2.9V
Number of terminals
3
Operating temperature
-55...+150°C
Packaging
tubus
Pd (Power Dissipation, Max)
290W
Power
116W
RoHS
yes
Saturation voltage VCE(sat)
2.3V
Td(off)
115 ns
Td(on)
25 ns
Trr Diode (Min.)
45 ns
Type of transistor
IGBT
Voltage (collector - emitter)
600V
Original product from manufacturer
Fairchild