N-channel transistor FGB20N60SF, 20A, D2PAK ( TO-263 ), D2-PAK, 600V

Quantity

Unit price

1-4

6.72$

5-14

5.80$

15-29

5.27$

30-59

4.88$

60+

4.34$

Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 29

N-channel transistor FGB20N60SF, 20A, D2PAK ( TO-263 ), D2-PAK, 600V. Ic(T=100°C): 20A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Collector/emitter voltage Vceo: 600V. Assembly/installation: surface-mounted component (SMD). C(in): 940pF. CE diode: no. Channel type: N. Collector current: 40A. Cost): 110pF. Function: solar inverter, UPS, welding machine, PFC. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60A. Marking on the case: FGB20N60SF. Note: N-channel MOS IGBT transistor. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. RoHS: yes. Saturation voltage VCE(sat): 2.4V. Td(off): 90 ns. Td(on): 12 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

FGB20N60SF

26 parameters

Ic(T=100°C)

20A

Housing

D2PAK ( TO-263 )

Housing (according to data sheet)

D2-PAK

Collector/emitter voltage Vceo

600V

Assembly/installation

surface-mounted component (SMD)

C(in)

940pF

CE diode

Channel type

Collector current

40A

Cost)

110pF

Function

solar inverter, UPS, welding machine, PFC

Gate/emitter voltage VGE(th) min.

4 v

Gate/emitter voltage VGE(th)max.

6.5V

Gate/emitter voltage VGE

20V

Germanium diode

Ic(pulse)

60A

Marking on the case

FGB20N60SF

Note

N-channel MOS IGBT transistor

Number of terminals

Operating temperature

-55...+150°C

Pd (Power Dissipation, Max)

208W

RoHS

yes

Saturation voltage VCE(sat)

2.4V

Td(off)

90 ns

Td(on)

12 ns

Original product from manufacturer

Fairchild