N-channel transistor FGA60N65SMD, TO-3P ( TO-218 SOT-93 ), 60A, TO-3PN, 650V. Housing: TO-3P ( TO-218 SOT-93 ). Ic(T=100°C): 60A. Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. Assembly/installation: PCB through-hole mounting. C(in): 2915pF. CE diode: yes. Channel type: N. Charge: 284nC. Collector current Ic [A]: 60A. Collector current: 60.4k Ohms. Collector peak current Ip [A]: 180A. Cost): 270pF. Emitter - Gate Voltage: ±20V. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 180A. Maximum saturation voltage VCE(sat): 2.5V. Number of terminals: 3. Operating temperature: -55...+175°C. Packaging: tubus. Pd (Power Dissipation, Max): 600W. Power: 300W. RoHS: yes. Saturation voltage VCE(sat): 1.9V. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Trr Diode (Min.): 47ms. Type of transistor: IGBT. Voltage (collector - emitter): 650V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 07:15