N-channel transistor FDV303N, SOT-23, 25V

N-channel transistor FDV303N, SOT-23, 25V

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N-channel transistor FDV303N, SOT-23, 25V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 25V. Ciss Gate Capacitance [pF]: 50pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.68A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.44 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 1V. Manufacturer's marking: 303. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.35W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 6 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 23:36

Technical documentation (PDF)
FDV303N
16 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
25V
Ciss Gate Capacitance [pF]
50pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.68A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.44 Ohms @ 0.2A
Gate breakdown voltage Ugs [V]
1V
Manufacturer's marking
303
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.35W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
30 ns
Switch-on time ton [nsec.]
6 ns
Original product from manufacturer
Onsemi (fairchild)