N-channel transistor FDV301N, SOT23, 25V, 25V

N-channel transistor FDV301N, SOT23, 25V, 25V

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Unit price
1-99
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100+
0.11$
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Quantity in stock: 26591

N-channel transistor FDV301N, SOT23, 25V, 25V. Housing: SOT23. Vdss (Drain to Source Voltage): 25V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 25V. Ciss Gate Capacitance [pF]: 9.5pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.22A. Drain current through resistor Rds [Ohm] @ Ids [A]: 4 Ohms @ 0.2A. Features: -. Gate breakdown voltage Ugs [V]: 301. Gate/source voltage Vgs max: 8V. Id @ Tc=25°C (Continuous Drain Current): 0.22A. Information: -. Manufacturer's marking: 301. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.35W. Mounting Type: SMD. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Polarity: MOSFET N. Rds On (Max) @ Id, Vgs: 9 Ohms / 0.2A / 2.7V. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 8 ns. Switch-on time ton [nsec.]: 8 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 23:36

Technical documentation (PDF)
FDV301N
23 parameters
Housing
SOT23
Vdss (Drain to Source Voltage)
25V
Drain-source voltage Uds [V]
25V
Ciss Gate Capacitance [pF]
9.5pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.22A
Drain current through resistor Rds [Ohm] @ Ids [A]
4 Ohms @ 0.2A
Gate breakdown voltage Ugs [V]
301
Gate/source voltage Vgs max
8V
Id @ Tc=25°C (Continuous Drain Current)
0.22A
Manufacturer's marking
301
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.35W
Mounting Type
SMD
Number of terminals
3
Pd (Power Dissipation, Max)
0.35W
Polarity
MOSFET N
Rds On (Max) @ Id, Vgs
9 Ohms / 0.2A / 2.7V
RoHS
yes
Switch-off delay tf[nsec.]
8 ns
Switch-on time ton [nsec.]
8 ns
Original product from manufacturer
Onsemi (fairchild)