N-channel transistor FDS6912, SO8, 30 v. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 740pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 6A/6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms/0.028 Ohms @ 6A/6A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: FDS6912. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 29 ns. Switch-on time ton [nsec.]: 16 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 22:31