N-channel transistor FDS6900AS, SO, 8.2A, 8.2A, 30 v, SO-8, 30 v. Housing: SO. Housing (JEDEC standard): -. ID (T=25°C): 8.2A. Idss (max): 8.2A. Drain-source voltage Uds [V]: 30 v. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: N. Ciss Gate Capacitance [pF]: 570pF/600pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 8.2A/6.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms / 0.038 Ohms @ 8.2/6.9A. Function: 6.9A, Rds-on 0.027 Ohms (Q1). Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: FDS6900AS. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. Number of terminals: 8. Quantity per case: 2. RoHS: yes. Spec info: 8.2A, Rds-on 0.022 Ohms (Q2). Switch-off delay tf[nsec.]: 29 ns. Switch-on time ton [nsec.]: 20 ns. Technology: Dual N-Channel MOSFET Transistor. 'PowerTrench - SyncFET'. Type of transistor: MOSFET. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19