N-channel transistor FDS6690A, 11A, 10uA, 9.8m Ohms, SO, SO-8, 30 v. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 9.8m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1205pF. Channel type: N. Conditioning unit: 2500. Conditioning: roll. Cost): 290pF. Drain-source protection: yes. Function: logic level control. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 50A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 9 ns. Technology: PowerTrench MOSFET. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19