N-channel transistor FDS6670A, SO8, 30 v. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 2220pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: FDS6670A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 64 ns. Switch-on time ton [nsec.]: 19 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 23:16