| Quantity in stock: 30 |
N-channel transistor FDP3632, 57A, 80A, 250uA, 0.009 Ohms, TO-220, TO-220AB, 100V
Quantity
Unit price
1-4
5.33$
5-9
4.87$
10-24
4.44$
25-49
4.06$
50+
3.50$
| Obsolete product, soon to be removed from the catalog. Last items available | |
| Equivalence available | |
| Quantity in stock: 5 |
N-channel transistor FDP3632, 57A, 80A, 250uA, 0.009 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 0.009 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 6000pF. Channel type: N. Cost): 820pF. Drain-source protection: yes. Function: DC/DC voltage converter and UPS inverters. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 80A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 310W. Quantity per case: 1. RoHS: yes. Td(off): 90 ns. Td(on): 30 ns. Technology: N-Channel PowerTrench® MOSFET. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:19
FDP3632
30 parameters
ID (T=100°C)
57A
ID (T=25°C)
80A
Idss (max)
250uA
On-resistance Rds On
0.009 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
6000pF
Channel type
N
Cost)
820pF
Drain-source protection
yes
Function
DC/DC voltage converter and UPS inverters
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
80A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
310W
Quantity per case
1
RoHS
yes
Td(off)
90 ns
Td(on)
30 ns
Technology
N-Channel PowerTrench® MOSFET
Trr Diode (Min.)
64 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
ON Semiconductor