N-channel transistor FDP18N50, 10.8A, 18A, 10uA, 0.22 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 10.8A. ID (T=25°C): 18A. Idss (max): 10uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 2200pF. Channel type: N. Cost): 330pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 72A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 235W. Quantity per case: 1. RoHS: yes. Spec info: Faible charge de grille (45nC typique). Td(off): 95 ns. Td(on): 55 ns. Technology: N-Channel MOSFET (UniFET). Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19