N-channel transistor FDD6635, 15A, 59A, 59A, 0.016 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V

N-channel transistor FDD6635, 15A, 59A, 59A, 0.016 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V

Quantity
Unit price
1-4
1.62$
5-49
1.56$
50-99
1.52$
100+
1.46$
Quantity in stock: 82

N-channel transistor FDD6635, 15A, 59A, 59A, 0.016 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 15A. ID (T=25°C): 59A. Idss (max): 59A. On-resistance Rds On: 0.016 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 1400pF. Channel type: N. Cost): 317pF. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. Id(imp): 100A. Marking on the case: FDD6635. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 55W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FDD6635
29 parameters
ID (T=100°C)
15A
ID (T=25°C)
59A
Idss (max)
59A
On-resistance Rds On
0.016 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
40V
Assembly/installation
surface-mounted component (SMD)
C(in)
1400pF
Channel type
N
Cost)
317pF
Drain-source protection
diode
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
100A
Marking on the case
FDD6635
Number of terminals
2
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
55W
Quantity per case
1
RoHS
yes
Td(off)
28 ns
Td(on)
11 ns
Technology
PowerTrench MOSFET
Trr Diode (Min.)
26 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
Fairchild