N-channel transistor FDD6296, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v

N-channel transistor FDD6296, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v

Quantity
Unit price
1-4
3.27$
5-49
3.11$
50-99
2.95$
100+
2.61$
Quantity in stock: 293

N-channel transistor FDD6296, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0088 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: N. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. Id(imp): 100A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 52W. Quantity per case: 1. RoHS: yes. Technology: PowerTrench MOSFET. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:19

FDD6296
22 parameters
ID (T=25°C)
50A
Idss (max)
1uA
On-resistance Rds On
0.0088 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Drain-source protection
diode
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
100A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
52W
Quantity per case
1
RoHS
yes
Technology
PowerTrench MOSFET
Trr Diode (Min.)
25 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Original product from manufacturer
ON Semiconductor